Failure model and detecting method for MOSFET degradation in DC-DC power converters

نویسندگان

  • Li-Feng Wu
  • Peng-Fei Dong
  • Yong Guan
  • Guo-Hui Wang
  • Xiao-Juan Li
چکیده

MOSFET is the most commonly used devices in DC-DC power converters, and its performance is important to the prognosis and health management of power. The paper proposes a degradation analysis model for MOSFET in DC-DC power converters. A method for detecting the degradation of MOSFET is also introduced. Simulations have shown that the method can predict deterioration in the performance of MOSFET. The simulation results are good agreement with the theory.

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تاریخ انتشار 2014